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| Hyper Mini TOPLED(R) Hyper-Bright LED LS M676, LA M676, LO M676 LY M676 Besondere Merkmale q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) VPL06927 Features q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Semiconductor Group 1 1998-11-12 LS M676, LA M676, LO M676 LY M676 Typ Type Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Luminous Intensity IF = 20 mA IV (mcd) 16 25 40 63 25 25 40 63 100 40 25 40 63 100 40 25 40 63 100 40 Lichtstrom Luminous Flux IF = 20 mA V (mlm) Bestellnummer Ordering Code LS M676-MQ super-red LS M676-N LS M676-P LS M676-Q LS M676-NR LA M676-NR LA M676-P LA M676-Q LA M676-R LA M676-PS LO M676-NR LO M676-P LO M676-Q LO M676-R LO M676-PS LY M676-NR LY M676-P LY M676-Q LY M676-R LY M676-PS amber ... 125 ... 50 100 (typ.) ... 80 180 (typ.) ... 125 300 (typ.) ... 200 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 200 80 125 200 320 200 80 125 200 320 200 80 125 200 320 180 (typ.) 300 (typ.) 450 (typ.) 180 (typ.) 300 (typ.) 450 (typ.) 180 (typ.) 300 (typ.) 450 (typ.) - Q62703-Q3285 Q62703-Q3288 Q62703-Q3286 Q62703-Q3287 Q62703-Q3289 Q62703-Q3536 Q62703-Q3537 Q62703-Q3538 Q62703-Q3539 Q62703-Q3540 Q62703-Q3290 Q62703-Q3291 Q62703-Q3292 Q62703-Q3293 Q62703-Q3294 Q62703-Q3295 Q62703-Q3296 Q62703-Q3297 Q62703-Q3298 Q62703-Q3299 colorless clear orange colorless clear yellow colorless clear Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 2 1998-11-12 LS M676, LA M676, LO M676 LY M676 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung1) Reverse voltage1) Verlustleistung Power dissipation Symbol Symbol Werte Values LS, LA, LO LY - 55 ... + 100 - 55 ... + 100 + 100 30 20 to be defined Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 802) 5802) 3 552) 500 V mW K/W Warmewiderstand Rth JA Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) 2) Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. vorlaufig/preliminary *) PC-board: FR4 Semiconductor Group 3 1998-11-12 LS M676, LA M676, LO M676 LY M676 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit 632 615 605 587 nm 16 16 16 15 nm 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 Grad deg. V V A A Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 4 1998-11-12 LS M676, LA M676, LO M676 LY M676 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 OHL00235 V 60 yellow orange amber super-red 40 20 0 400 450 500 550 600 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 5 1998-11-12 LS M676, LA M676, LO M676 LY M676 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 mA F 5 OHL00232 Relative Lichtstarke IV / IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C V 10 1 OHL00233 V (20 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 superred yellow orange/amber 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 -1 10 5 10 0 5 10 1 F mA 10 2 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 35 OHL00248 Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 20 mA V 2.0 OHL00238 F mA 30 25 yellow 20 15 10 V (25 C) 1.6 1.2 orange yellow amber super-red 0.8 orange yellow amber super-red 0.4 5 0 0 -20 0 20 40 60 80 C 100 TA 0 20 40 60 C TA 100 Semiconductor Group 6 1998-11-12 LS M676, LA M676, LO M676 LY M676 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 1.0 0.8 0.15 0.05 1.4 1.2 Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 7 1998-11-12 GPL06928 Cathode marking 1.5 1.3 Cathode marking typ. 1.5 x 1.0 2.3 2.1 2.1 1.9 0.5 0.3 |
Price & Availability of Q62703-Q3537
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